Appeal No. 1998-2309 Page 2
Application No. 08/277,035
BACKGROUND
Appellants’ invention relates to a method of making an
integrated circuit capacitor. An understanding of the
invention can be derived from a reading of exemplary claim 14,
which is reproduced as follows:
14. A method of making an integrated circuit capacitor,
said method comprising the steps of:
forming a first metal electrode;
providing a liquid precursor comprising barium,
strontium, and titanium together in a common solution;
depositing said precursor directly on said first metal
electrode to form a thin film; and
annealing said thin film at a temperature ranging from
675 C to 850 C to form a perovskite layer of barium strontium" "
titanate on said first metal electrode,
The prior art reference of record relied upon by the
examiner in rejecting the appealed claims are:
Swartz et al. 5,198,269 Mar. 30,
1993
(Swartz) (filed Aug. 28,
1989)
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