Appeal No. 1998-2309 Page 11
Application No. 08/277,035
the case of PZT materials on aluminum or sapphire (see the
table in column 9 at lines 3c, 9b, and 12b)."
Swartz further discloses (col. 19, lines 45-48) the use
of (BST) in a thin-film capacitor. However, as disclosed by
Swartz, the BST is disclosed as the second deposited layer,
where the first layer is another perovskite whose
crystallization is independent of the substrate. We find that
Swartz additionally discloses (col. 8, lines 19-43) that
ferroelectric films can be formed by first depositing an
interlayer of one composition that is a constituent of the
desired film, and then depositing the film with the
composition adjusted to account for the composition of the
interlayer. Specifically, a BST film is produced by first
depositing a film of SrTiO and then a film of BaTiO . After3 3
annealing, the resultant film is BST, which is directly on the
substrate. However, method claim 14 recites the step of
providing the barium, strontium, and titanium in a common
solution as the liquid precursor. We agree with appellants
(brief, pages 10 and 11) that Swartz discloses the deposition
of two distinct layers followed by interdiffusion, which does
not meet the claimed method step. Moreover, we note, that
Page: Previous 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Next
Last modified: November 3, 2007