Ex parte AZUMA et al. - Page 1




             The opinion in support of the decision being entered today was not written
                    for publication and is not binding precedent of the Board.        
                                                                 Paper No. 25         
                       UNITED STATES PATENT AND TRADEMARK OFFICE                      
                                     ____________                                     
                          BEFORE THE BOARD OF PATENT APPEALS                          
                                   AND INTERFERENCES                                  
                                     ____________                                     
                 Ex parte MASAMICHI AZUMA and CARLOS A. PAZ DE ARAUJO                 
                                     ____________                                     
                                 Appeal No. 1999-0418                                 
                              Application No. 08/517,036                              
                                     ____________                                     
                                 HEARD: March 20, 2001                                
                                     ____________                                     
          Before THOMAS, KRASS, and BARRY, Administrative Patent Judges.              
          BARRY, Administrative Patent Judge.                                         



                                  DECISION ON APPEAL                                  
               This is a decision on appeal under 35 U.S.C. § 134 from                
          the  rejection of claims 1-11.  We reverse.                                 


                                     BACKGROUND                                       
               The invention at issue in this appeal relates to thin                  
          film metal-ferroelectric-insulator-semiconductor (MFS or MFIS)              
          devices.  Ferroelectric materials can be used as a gate                     
          insulator of metal oxide semiconductor field effect transistor              
          (MOSFET) devices.  When so used, the spontaneous polarization               





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