Appeal No. 1999-0418 Page 7
Application No. 08/517,036
217 F.3d 1365, 1370, 55 USPQ2d 1313, 1316 (Fed. Cir. 2000)
(citing In re Dance, 160 F.3d 1339, 1343, 48 USPQ2d 1635, 1637
(Fed. Cir. 1998) and In re Gordon, 733 F.2d 900, 902, 221 USPQ
1125, 1127 (Fed. Cir. 1984)).
Here, the examiner fails to identify a sufficient
suggestion to combine the layered superlattice material of Paz
with the memory cell of Arnett. Rather than the claimed
ferroelectric metal oxide layered superlattice material,
Arnett teaches a layer of barium titanate (BaTiO ).
3
Specifically, "there is deposited a ferroelectric material 18
such as 1000 angstroms of barrium titnate [sic., barium
titanate] ...." P. 2825.
For it memory cell to operate properly, moreover, Arnett
emphasizes that the ferroelectric material must have a large
capacitance. Specifically, "[t]he ferroelectric material 18
is used to provide a high-capacitance material between the
gate electrode 19 and the trap material 17." P. 2825. More
specifically, "[c]harging and discharging of the trap material
17 is accomplished at low voltages and at high speeds, by
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