Appeal No. 2003-1365
Application No. 09/376,659
Representative independent claims 1 and 10 are reproduced
bellow:
1. A method for establishing plural core gate transistors
on a semiconductor substrate, comprising:
forming plural core gate stacks on the substrate, each core
gate stack having at least one side;
covering the core gate stacks with a first protective layer;
etching away portions of the first layer such that at least
intended source regions of the substrate are exposed;
implanting dopant into the intended source regions;
depositing a second protective layer onto the first layer,
the second protective layer including high temperature oxide
(HTO);
etching the second protective layer such that at least
intended drain portions of the substrate are exposed;
implanting dopant into the intended drain regions to thereby
establish plural core transistors; and
undertaking subsequent manufacturing acts with first and
second layers protecting at least the sides of the core gate
stacks.
10. A method for making a flash memory device, comprising:
forming first and second protective shoulders on core gate
stacks, such that dopant can be implanted into a substrate
supporting the stacks to establish transistors and such that
charge migration into sides of the gate stacks during interlayer
dielectric(ILD) formation and device metallization is prevented,
at least the second shoulder including high temperature oxide
(HTO).
3
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