Appeal 2007-2417
Application 10/688,521
2. Photoresists “are used [i]n patterning semiconductor wafers to
form integrated circuits.” (Specification 1).
3. The process of forming the patterned photoresist is “subject to so-
called line edge roughness” which is “surface roughness in the
patterned photoresist features” that can lead to leakage of the
transistor. (Specification 1-2).
4. The claimed invention is said to address the line edge roughness
problem by treating the photoresist with a plasticizer in a
supercritical fluid after developing the photoresist and then
reflowing the photoresist. (Specification 4-5).
5. The plasticizer is said to be “a liquid, gas, combined gas and liquid
phases, or super-critical and liquid gases, including supercritical
carbon dioxide, liquid carbon dioxide, or ethane.” (Specification
5).
6. According to the Meagley Specification:
A plasticizer can lower the glass transition temperature of the
Photoresist mask…allowing rough resist lines to flow and level to reduce
overall line edge roughness. The molecules to be absorbed may be
introduced into the photoresist in a gas phase, a liquid phase, a combination
of gas or liquid, or in a supercritical fluid. .
(Specification 6).
7. For example, the plasticizer may be the vapor phase of a solvent
such as ethyl lactate. (Specification 6-7).
8. Claim 1 is representative of all the rejected claims:1
1 Meagley does not argue any of its claims separately.
3
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