Appeal No. 96-0348
Application 08/145,268
contact with the base of the bonded SOI wafer, is formed of doped
polysilicon, which doping by out-diffusion serves to electrically
insulate the conductive pillar from the base.
Appellant groups claims 1 and 3, and 7 and 9 and separately
argues the two groups. (Brief, page 3). 37 CFR § 1.192(c)(7).
Accordingly, we limit our consideration to claims 1 and 7, the
only independent claims, in considering the rejection of the
claims. Claims 1 and 7 read as follows:
1. In an integrated circuit, a heat sink comprising:
a conductive pillar which extends from a top of a
bonded semiconductor on insulator (SOI) wafer through
an isolation region of the bonded SOI wafer and is in
physical contact with a base of the bonded SOI wafer,
the base of the bonded SOI wafer being located below
the isolation region of the bonded SOI wafer, wherein
the conductive pillar comprises doped polysilicon,
doping for the polysilicon out-diffusing from the
polysilicon into the base, thereby electrically
insulating the conductive pillar from the base.
7. A heat sink formed on a bonded semiconductor on
insulator (SOI) wafer, the heat sink comprising:
conductive material in a trench, the trench extending
from a top of the bonded SOI wafer through an isolation
region of the bonded SOI wafer to a base of the bonded
SOI wafer, the base of the bonded SOI wafer being
located below the isolation region of the bonded SOI
wafer wherein the conductive extends from the top of
the bonded SOI wafer through the isolation region of
the bonded SOI wafer and is in physical contact with
but is electrically isolated from the base of the
bonded SOI wafer, the conductive material comprising
doped poly silicon, doping for the polysilicon out-
diffusing from the polysilicon into the base, thereby
electrically insulating the conductive material from
the base.
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Last modified: November 3, 2007