Appeal No. 95-2503
Application No. 08/024,883
This is a decision on appeal from the final rejection of
claims 1 through 8 and 30 through 43, all the claims pending
in the application.
The invention pertains to an insulated gate field effect
transistor (IGFET) structure. More particularly, the junction
depth and doping concentrations of non-overlapped (lightly
doped portions of source and drain not beneath the transistor
gate) and overlapped (lightly doped portions of source and
drain beneath the transistor gate) portions of the source and
drain junctions may be controlled independently which is said
to result in optimal transistor performance and reliability
characteristics tailored to the desired use.
Independent claim 1 is reproduced as follows:
1. An insulated-gate field-effect transistor comprising:
a semiconductor substrate;
a drain region formed in said semiconductor substrate,
said drain region comprising a heavily doped region, a first
lightly doped region with a first selected doping
concentration and junction depth and a second lightly doped
region with a second selected doping concentration and
junction depth, wherein said first selected doping
concentration and junction depth is independent of said second
selected doping concentration and junction depth and wherein
said second selected doping concentration and junction depth
2
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