Appeal No. 95-2859 Application 08/118,109 The Rejections on Appeal Claims 1-6 stand finally rejected under 35 U.S.C. § 103 as being unpatentable over the appellant’s own admitted prior art of Figures 1-3 in view of Morris. The Invention The invention is directed to an integrated circuit including a field effect transistor and a resistor. The gate of the transistor is formed from a conductor layer and the resistor is formed in a tub region of the same conductivity type as the source and drain of the transistor. The resistor underlies a "resistor masking conductor" formed from the conductor layer also forming the gate of the transistor. Claim 1 is the only independent claim and is reproduced below. 1. An integrated circuit including a field effect transistor having a gate conductor formed from a conductor layer overlying a semiconductor body, and having a source/drain region of a given conductivity type that is coupled to a circuit conductor through a resistor, characterized in that said resistor is formed in a tub region of said given conductivity type, with said tub region being connected to said circuit conductor by means of a heavily doped contact region of said given conductivity type that is formed in said tub region; and wherein said resistor underlies a resistor masking conductor formed from said conductor layer, whereby the size of said resistor is defined by said resistor masking conductor. 2Page: Previous 1 2 3 4 5 6 7 NextLast modified: November 3, 2007