Appeal No. 95-3538
Application 08/108,356
article at page 1709 in column 1, lines 4-7, states: "The QC-
BiCMOS features the 'quasi-p-n-p’ connection, which consists of a
pMOS (MP2) and n-p-n bipolar transistor (Q2)." In accordance
with Figure 1(b), the pMOS transistor MP2 and the n-p-n bipolar
transistor Q2 together form a "quasi p-n-p" component
complementary to the n-p-n transistor Q1.
Thus, the appellant has established that the term "quasi-
complementary BiCMOS" has a recognized meaning in the art
referring to the combination or composite circuit of a pMOS
transistor and an n-p-n bipolar transistor. Collectively, it is
complementary to an n-p-n bipolar transistor in the circuit. We
note further that "BICMOS" has an established meaning in the art
referring to circuitry made of both bipolar and CMOS transistors.
See U.S. Patent 5,057,713 in column 1, lines 13-14.
The examiner’s view that quasi-complementary BiCMOS does not
have a recognized meaning in the art is unpersuasive. The
examiner points to Iwamura (U.S. Patent 5,057,713) and Young et
al. (U.S. Patent 5,111,077) which refer to a circuit employing a
pMOS transistor to drive an n-p-n bipolar transistor simply as
Bi-CMOS or BiCMOS. But that is not inconsistent with the
appellant’s position. The term "Bi-CMOS" or "BiCMOS" is broader
and covers quasi-complementary type of Bi-CMOS/BiCMOS circuits.
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