Ex parte HORN et al. - Page 9




          Appeal No. 95-3674                                                          
          Application 08/122,981                                                      

          Answer, page 5):                                                            
               Line 51 of column 7 discloses an "average particle size of             
               0.08µm" which is equal to 80 nanometers.  Therefore the                
               term "nanoporous" is obvious over the teachings of                     
               Yokotani.  Even the size of 8000 nanometers (8 µm) as                  
               disclosed in line 43 of column 7 is obvious over the term              
               "nanoporous" because the particle size can be measured in              
               nanometers.                                                            
          The examiner does not come to grips with the "nanoporous"                   
          limitation.  The fact that the particles in the layer of                    
          figure 6 are on the order of tens of nanometers does not make               
          the layer a "nanoporous" material because the particles have                
          not been compacted and sintered.  We do not agree with the                  
          examiner's statement that a material is "nanoporous" because                
          the particle size can be expressed in nanometers.  Any object's             
          size can be expressed in nanometers, but "nanostructured"                   
          requires a size less than 100 nanometers.                                   
               In addition, claim 7 calls for "providing a nanoporous                 
          semiconductor material" and then "fabricating p-type and n-type             
          thermoelectric semiconductor elements from the nanoporous                   
          semiconductor material."  Thus, claim 7 calls for making p-type             
          and n-type semiconductors out of nanoporous material,                       
          apparently in accordance with the disclosure in the                         
          specification that there can be "additional doping after                    
          fabrication" (specification, page 4, lines 14-15).  Claim 7                 
          does not encompass forming the nanoporous material using p-type             
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