Appeal No. 95-4292
Application 07/962,544
This is a decision on an appeal from the examiner’s
final rejection of claims 5-9 and 11. Claims 1-4 have been
withdrawn from consideration and claim 10 has been canceled.
The appellants’ claimed subject matter is a
monolithic semiconductor device having a field effect
transistor and a bipolar junction transistor. Claim 5 is
exemplary of the subject matter on appeal and recites:
5. A monolithic semiconductor device having a field
effect transistor and a bipolar junction transistor, the
bipolar junction transistor further comprising:
a collector of a first dopant type;
a base having an intrinsic concentration of a second
dopant type and forming a first PN junction with the
collector, the base including (i) an extrinsic contact region
characterized by a concentration of the second dopant which is
greater than the intrinsic concentration and (ii) a trenched
surface;
a pillar structure, comprising the second dopant
type, extending from the base and away from the trenched
surface;
an emitter of the first dopant type connected to the
pillar structure at a surface displaced from the base, the
emitter forming a PN junction with the pillar structure.
THE REFERENCES
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