Appeal No. 95-4873
Application No. 08/174,723
Appellant discloses a resonant-tunneling transistor
wherein a source terminal 7 is electrically connected to a quantum
well 4 when majority carriers from the area of terminal 7 tunnel
through the double-barrier resonant-tunneling barrier 5 to the
quantum well 4. Transistor action is observed when the majority
carriers propagate across the well and tunnel through the
tunneling barrier 5 to the drain terminal 6 in a manner that
results in a DC current gain. The transistor operation is
controlled by a gate terminal 2.
The Prior Art
The reference to Yang discloses a field-effect resonant-
tunneling transistor having a gate terminal (Back Gate), an n+
GaAs substrate, a 2.8Fm undoped AlGaAs and GaAs insulating barrier
on the substrate, a 200Å n+ GaAs quantum well on the insulating
barrier, a three layer, double-barrier, tunneling barrier on the
quantum well, the tunneling barrier consisting of two 30Å undoped
Al Ga As barriers sandwiching a 70Å GaAs layer, a 1500Å n+ GaAs
0.370.63
layer on the tunneling barrier and a capping layer on the 1500Å
layer. A source terminal is located on the top of the structure.
A drain terminal extends from the top of the structure through
several layers of the transistor into the quantum well.
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Last modified: November 3, 2007