Appeal No. 96-0665
Application No. 08/179,887
The invention pertains to a single polysilicon layer flash
E2PROM cell, the nature of which is best illustrated by reference
to independent claim 16, reproduced as follows:
16. An E PROM cell comprising:2
a substrate of a first conductivity type having source,
drain and control gate regions of a second conductivity type
disposed along a surface of the substrate and extending into the
substrate, the source and drain regions defining a channel region
therebetween and being separated from the control gate region;
an oxide layer formed on the surface of the substrate and
having portions located over the source, drain, channel and
control gate regions; and
a floating gate formed over the oxide layer and comprising
polysilicon, the floating gate being part of the only layer of
the cell containing polysilicon, the floating gate consisting
solely of:
a first portion located over the control gate region;
and
an elongated second portion including:
a first part located over portions of the source
and drain regions and over the channel region, and
a second part connected between the first portion
and the first part.
The examiner relies on the following reference:
Adam 4,425,631 Jan. 10, 1984
Claim 16 stands rejected under 35 U.S.C. § 102(b), or,
alternatively, 35 U.S.C. § 103, as being anticipated by, or
obvious over, Adam.
2
Page: Previous 1 2 3 4 5 6 7 8 Next
Last modified: November 3, 2007