Appeal No. 96-3475
Application 08/245,775
1. A process for indium doping of a Group II/Group VI semiconductor material by
chemical vapor deposition wherein the indium source is triisopropylindium.
6. The process of claim 1, wherein the indium doping concentration of said doping
19 -3
reaction takes place at a carrier concentration ranging from about 1 x 10 cm to about 1 x
14 -3
10 cm in said Group II/Group VI semiconductor material.
7. A process for indium doping a Group II/Group VI semiconductor material by chemical
vapor deposition which comprises reacting triisopropylindium and one or more sources of a
Group II material and one or more sources of a Group VI material by chemical vapor deposition
at a temperature sufficiently high to at least partially decompose the triisopropylindium and said
Group II and said Group VI source materials, and depositing said Group II/Group VI
semiconductor materials on a semiconductor substrate such that minimal indium memory doping
occurs.
13. An indium-doped Group II/Group VI semiconductor material produced by the
process of claim 1, wherein the indium doping concentration of said doping reaction takes place at
19 -3 14 -3
a carrier concentration ranging from about 1 x 10 cm to about 1 x 10 cm in said Group
II/Group VI semiconductor material.
The reference of record relied upon by the examiner is:
Chen et al. (Chen), "Triisopropylindium for OMVPE growth", Journal of Crystal Growth, Vol.
124, Nos. 1-4, (1992), pp. 88-92.
A reference cited and relied upon by the Board is:
Gedridge 5,346,852 Sept. 13, 1994
(filed Feb. 25, 1993)
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