Appeal No. 97-0725
Application 08/304,906
1. A thin film transistor, comprising:
an active layer including a channel region of a first
conductivity type, a source region of a second conductivity type
adjacent to one end of the channel region, an offset region of
the first conductivity type having one end connected to another
end of said channel region, and a drain region of the second
conductivity type connected to another end of the offset region;
a first insulating film formed on a first surface of
said active layer;
a gate electrode formed at a position opposing to said
channel region with said first insulating film interposed; and
a second insulating film formed at a position opposing
to said offset region with said first insulating film interposed,
including an ion implanted impurity for forming charges in an
amount sufficient to reduce the leakage current.
The examiner’s answer cites admitted prior art and the
following reference:
Woods 4,007,294 Feb. 8, 1977
OPINION
The claims stand rejected under 35 U.S.C. § 103 as
unpatentable over admitted prior art in view of Woods.
While the examiner has set forth a prima facie case of
obviousness as to claims 1 and 6, the examiner has not stated a
prima facie case as to claims 11, 17, 20, and 21 because there is
no treatment of the penultimate recitation of each of these
claims.
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