Appeal No. 96-0061
Application No. 08/018,313
Claims 1 and 8 are representative of the subject matter
on appeal and read as follows:
1. A method for forming contact holes in a layer of a
semiconductor device, comprising the steps of:
forming the layer to be etched on a substrate, said layer
having a stepped surface;
coating a negative resist film on the layer until the
stepped surface of the layer has a flat surface;
patterning the negative resist film to correspond to the
contact holes;
and
etching the layer by anisotropic etching using the resist
film as an etching mask.
8. A method for forming contact holes comprising the
steps of:
forming an insulating layer to be etched on a substrate,
said insulating layer having a stepped surface;
coating a negative resist film on the insulating layer
until the stepped surface has a flat surface, said negative
resist film having an absorptivity of 0.50 µm or above to a-1
KrF excimer laser;
patterning the negative resist film to correspond to at
least two contact holes, one of the contact holes being formed
on an upper portion of the stepped surface, and the other
being formed on a lower portion of the stepped surface; and
2
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