Appeal No. 96-0285
Application 07/900,528
This is a decision on the appeal under 35 U.S.C. § 134
from the examiner’s rejection of claims 1-19, which constitute
all the claims in the application.
The invention pertains to a method for manufacturing
integrated circuit devices including elements formed according
to both CMOS technologies and self-aligned double poly bipolar
technologies to create BiCMOS devices.
Representative claim 12 is reproduced as follows:
12. A process for manufacturing an integrated circuit
device including circuit elements formed according to both
CMOS and bipolar technologies including the steps of
simultaneously forming portions of circuit elements
according to both said CMOS and said bipolar technologies, and
completing said circuit elements according to said
bipolar technology including the further steps of
forming an aperture in a layer, said layer forming
an impurity diffusion source for an extrinsic base of at least
one circuit element according to said bipolar technology,
forming an intrinsic base of said at least one
circuit element within said aperture,
forming a spacer on sidewalls of said aperture and
forming an emitter of said at least one circuit element
deposited within said spacer on said sidewalls of said
aperture.
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