Appeal No. 96-0471
Application 07/995,582
Claim 1 is reproduced below.
1. A deep trench transistor structure which provides
junction breakdown stability, comprising:
a base region;
a collector region surrounded by a buffer region,
wherein the base region rests on top of the buffer region
and the collector region;
a deep trench having at least two sidewalls and a
floor, wherein the base region extends to the sidewalls;
and
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