Ex parte YAMAZAKI et al. - Page 2




          Appeal No. 96-1467                                                          
          Application No. 08/247,452                                                  


          § 134 from the examiner’s rejection of claims 22-32, which                  
          constitute all the claims remaining in the application.                     
          The disclosed invention pertains to an electro-optical                      
          device such as a liquid crystal display (LCD) having a                      
          plurality of pixels disposed in a matrix arrangement.  The                  
          pixels are switched on and off by thin film transistors                     
          (TFTs).  The TFTs have a hydrogen-doped semiconductor layer as              
          an active region, and the semiconductor layer has a                         
          crystalline structure with lattice distortion.                              
          Representative claim 22 is reproduced as follows:                           
               22. An electro-optical device comprising:                              
                    a pair of substrates;                                             
                    a light influencing layer disposed between said                   
          substrates;                                                                 
                    an electrode arrangement formed on an inside surface              
          of at least one of said substrates, with which a plurality of               
          pixels are defined in said influencing layer;                               

                    thin film transistors provided for said pixels; and               
                    a driving circuit for supplying a control signal to               
          said thin film transistors,                                                 
                    wherein said thin film transistors have a hydrogen-               
          doped semiconductor layer as an active region, said                         
          semiconductor layer having a crystalline structure with                     
          lattice distortion, and having one of an electron mobility in               
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