Appeal No. 96-2939
Application No. 08/205,423
amended under 37 CFR § 1.116 after the final rejection. See 2
the amendment dated May 11, 1995 (Paper No. 7) and the
advisory action dated May 23, 1995 (Paper No. 8).
THE INVENTION
Appellants’ invention is directed to a method for
chemical mechanical polishing (CMP) of semiconductors having a
metal layer. A slurry composition containing copper sulfate,
CuSO , or copper perchlorate, Cu(ClO ) , is used to polish the4 4 2
metal layer.
THE CLAIMS
Claims 1 and 4 are illustrative of appellants’ invention
and are reproduced below.
1. A method for chemical mechanical polishing a metal
layer in a semiconductor device comprising the step of
polishing the metal layer using a slurry comprising copper
sulfate and having a pH of between approximately 4-7.
4. A method for chemical mechanical polishing a metal
layer in a semiconductor device comprising the step of
polishing the metal layer using a slurry comprising copper
perchlorate and having a pH of between approximately 4-7.
THE REFERENCES OF RECORD
As evidence of obviousness, the examiner relies upon the
2Claims 3 and 6 were canceled in the amendment under 37
CFR § 1.116.
2
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