Ex parte TARTE et al. - Page 2


                     Appeal No. 1996-3534                                                                                                                                              
                     Application 08/323,410                                                                                                                                            

                                forming insulating fillets along the perimeter regions of the seed layer between the seed layer                                                        
                     and an underlying layer for preventing electroplating of material adjacent the perimeter regions on the                                                           
                     seed layer.                                                                                                                                                       
                                7.  In a process for selective metal deposition using laser writing to form activated seed layers                                                      
                     for electroplating of a conductive metal thereon, the improvement comprising:                                                                                     
                                preventing conductor shorting due to the electroplating by providing means for protecting                                                              
                     metallic material located adjacent the activated seed layer from being electroplated.                                                                             
                                8.  The improvement of Claim 7, wherein the means is provided by forming electrically                                                                  
                     insulating fillets along edge crevices of the activated seed layer for insulating any exposed conductive                                                          
                     material adjacent the perimeter regions of the activated seed layer.                                                                                              
                                15.  An integrated circuit component including a substrate, at least one integrated circuit chip                                                       
                     and at least one metallic interconnect formed by electroplating conductive material on an activated seed                                                          
                     layer, including means for protecting conductive material located adjacent a perimeter of the activated                                                           
                     seed layer from shorting due to electroplating of the conductive metallic interconnect.                                                                           
                                16.  The integrated circuit component of Claim 15, wherein said means comprises at least one                                                           
                     fillet of insulating material.                                                                                                                                    
                                According to appellants, appealed claims 1 through 14 encompass processes wherein the                                                                  
                     process of preparing a seed layer for selective metal deposition taught in Bernhardt is improved upon                                                             
                     by “providing sufficient insulation between the activated seed layer and the underneath perimeter region                                                          
                     of the components on which the seed later is formed to prevent shorting of the conductor lines via the                                                            
                     perimeter regions during subsequent electroplating” (specification, page 3, lines 3-18).  Claims 15                                                               
                     through 17 encompass an integrated circuit component that includes at least one metallic interconnect                                                             
                     formed by electroplating conductive material on an activated seed layer, and means for protecting                                                                 
                     conductive material located adjacent a perimeter of the activated seed layer from shorting due to                                                                 
                     electroplating, which means can comprise at least one fillet of insulting material.                                                                               
                                The references relied on by the examiner are:                                                                                                          
                     Ipri et al. (Ipri)                                               4,965,646                                            Oct. 23, 1990                               
                     Bernhardt                                                        5,098,526                                            Mar. 24, 1992                               
                                The examiner has rejected appealed claims 1 through 6 under 35 U.S.C. § 102(b) as                                                                      
                     anticipated by or, in the alternative, under 35 U.S.C. § 103 as obvious over Ipri.  The examiner has                                                              
                     also rejected appealed claims 7 and 15 through 17 under 35 U.S.C. § 102(b) as anticipated by or, in                                                               


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