Appeal No. 97-2422 Application 07/939,720 is confirmed by appellant's recitation in dependent claim 21 which indicates that the passivation layer is such a material. As to the consideration of the second rejection, including independent claims 27 and 36, appellant's position with respective to these is also misplaced. The analysis made with respect to independent claim 1 and the combination of teachings of Misawa and Sawatsubashi apply equally as well here. Our analysis with respect to the first passivation layer has already been made with respect to the passivation layer of independent claim 1 and the collective teachings of Misawa and Sawatsubashi at a minimum in addition to the teachings of Noguchi, additionally relied upon by the examiner. The claimed second or hydrogen-containing passivation layer of independent claims 27 and 36 is clearly met by the teachings in Noguchi. Before discussing the features of this reference, it is important to recognize that this second or hydrogen-containing passivation layer is recited as being only “selectively disposed on the first passivation layer.” This recitation is broad enough to include the limited teaching of silicon nitride over the drive circuits only of appellant's admitted prior art as indicated at the top of specification page 2 with respect to the showing in prior art Figure 21. Thus, the language of the claim may be 11Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 NextLast modified: November 3, 2007