Appeal No. 1996-3909 Page 2
Application No. 08/115,440
reduced by utilizing a specified annealing process involving:
(1) heating
the wafer to an annealing temperature above the decomposition
temperature of the thin film resistor, the increased annealing
temperature of the wafer being reached in about 5-10 seconds;
(2) carrying out the annealing step at the rapidly bumped up
annealing temperature for a time period of about 50-85
seconds; and (3) radiantly cooling the annealed wafer. An
understanding of the invention can be derived from a reading
of exemplary claim 13, which is reproduced below.
13. A process for increasing the sheet resistance and
lowering the temperature coefficient of resistance of a thin
film resistor deposited on a wafer, the process comprising:
(a) ramping the temperature of the wafer to an annealing
temperature which is above the decomposition temperature of
the thin film resistor by using a radiant heat source such
that the wafer reaches the annealing temperature within a ramp
up time of from about 5 to 10 seconds;
(b) annealing the wafer at the annealing temperature for
an annealing period of from about 50 to 85 seconds; and
(c) cooling the annealed wafer by radiant cooling.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Paulson et al. (Paulson) 4,510,178
Apr. 09, 1985
Vugts 4,520,342 May 28,
1985
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