Appeal No. 1997-3479
Application 08/495,039
particularly, the invention is directed to an improved
arrangement of selectable ground lines and the materials for
forming these selectable ground lines.
Representative claim 21 is reproduced as follows:
21. In an X-shaped ROM semiconductor memory device of
the type including:
a plurality of elongated polysilicon word lines arranged
in vertically spaced rows,
a plurality of horizontally spaced cell transistors
electrically connected to the polysilicon word lines,
a plurality of elongated metal bit lines and elongated
selectable ground lines alternately arranged in horizontally
spaced columns between the cell transistors,
contact regions for connecting adjacent cell transistors,
and a ground terminal;
the improvement characterized by said selectable ground
lines including:
groups of adjacent odd and even polysilicon selectable
ground lines,
a first and a second metal selectable ground line on
opposite sides of each group of polysilicon selectable ground
lines,
a first polysilicon interconnect line for interconnecting
the odd polysilicon selectable ground lines of each group of
polysilicon selectable ground lines to the first metal
selectable ground line,
a second polysilicon interconnect line for
interconnecting the even polysilicon selectable ground lines
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