Appeal No. 1997-3512 Page 2
Application No. 08/482,034
having first (40) and second (44) layers having the same
doping type
(specification, page 5) and approximately the same doping
concentration (specification, page 8). Representative claim
17 is reproduced as follows:
17. A method of fabricating a bipolar transistor,
comprising the steps of:
providing a material structure including an emitter layer
abutting a base structure, wherein said base structure
comprises first and second layers of semiconductor having the
same doping type and approximately the same doping
concentration, said first layer having a wider bandgap than
said second layer;
removing portions of said emitter layer to leave an
emitter mesa on said base structure; and
forming base contact metallization on said first layer of
semiconductor.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Liu et al. (Liu) 5,330,932 Jul. 19, 1994
Gaw et al. (Gaw) (EP) 0 384 113 Aug. 29, 1990
Claims 17, 18 and 20 stand rejected under 35 U.S.C. §
102(b) as anticipated by, or in the alternative, under 35
U.S.C. § 103 as obvious over Gaw.
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