Appeal No. 1997-4035
Application No. 08/274,475
Appellants' invention relates to a thin film
semiconductor device having a hygroscopic interlayer
insulating layer on the
active region and a cap layer on the hygroscopic layer for
blocking hydrogen diffusion. Claim 24 is illustrative of the
claimed invention, and it reads as follows:
24. A thin film semiconductor device comprising:
an insulating substrate;
a thin film transistor formed on the insulation substrate
having an active region;
a hygroscopic interlayer insulating layer formed on the
active region; and a cap layer substantially impermeable to
hydrogen formed on the interlayer insulating layer.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Blake 4,906,587 Mar. 06,
1990
Konishi et al. (Konishi) 4,943,837 Jul.
24, 1990
Claims 1 through 11 and 24 stand rejected under 35 U.S.C.
§ 103 as being unpatentable over Konishi in view of Blake.
Reference is made to the Examiner's Answer (Paper No. 20,
mailed May 30, 1997) for the examiner's complete reasoning in
support of the rejections, and to appellants' Brief (Paper No.
2
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