Appeal No. 1997-4442
Application 08/353,040
temperature dependence is eliminated (e.g., col. 4,
lines 20-22). De Wit discloses that the resistors are formed
by an n-well resistor (formed by n-well region 14) and a
polysilicon resistor (formed by polysilicon layer 16), but
states (col. 4, lines 23-29): "The general concept can be
expanded beyond an n-well resistor and a polysilicon
resistor. . . . In general, any two (or more) resistors which
have different temperature dependencies can be used." De Wit
discloses a resistance value of 1350 S/square and a first
order TCR of 5923.82 ppm/EC for R and a resistance value of
1
400 S/square and a first order TCR of -1725.9 ppm/EC for R2
(col. 4, lines 6 and 9). Thus, de Wit discloses first and
second resistances having a difference of resistance values
less than 10 and a difference in absolute values of the TCR of
less than 10. Appellants' arguments that de Wit does not
address maximum differences in resistance and the absolute
values of TCR (Br5; RBr2, second para.) are not persuasive.
De Wit's teaching of values within the claimed ranges of a
maximum factor of 10 is sufficient to anticipate these
limitations.
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