Appeal No. 1998-1100
Application No. 08/720,645
Claim 20 is illustrative of the claimed invention, and it
reads as follows:
20. A capacitor for a DRAM cell on a semiconductor
substrate; said semiconductor substrate having a MOS
transistor with a source region and a drain region;
comprising:
a storage electrode having an upright lower
cylindrical portion and a hemispherical shaped upper
portion; said hemispherical shaped upper portion
having
a hemispherical cross-sectional shape and a solid inside;
said upright lower cylindrical portion in electrical
contact with said source region in said substrate; said
hemispherical shaped upper portion centered over said
cylindrical lower portion; a capacitor dielectric
layer
and a top electrode covering said storage electrode.
The references relied on by the examiner are:
Ahn 5,386,382 Jan. 31, 1995
Suganaga et al. (Suganaga) 5,539,231 Jul. 23, 1996
(filed Mar. 2,
1995)
Claims 20 through 25 stand rejected under 35 U.S.C. § 103
as being unpatentable over Ahn in view of Suganaga.
Reference is made to the brief and the answer for the
respective positions of the appellant and the examiner.
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