Appeal No. 1998-1102
Application No. 08/761,883
a barrier to the deterioration of the polysilicon resistor.
The first insulating layer, formed of a glasseous material, is
formed directly upon the surface of a semiconductor substrate,
while the second insulating layer is formed directly upon the
first insulating layer and over the polysilicon resistor.
Appellant indicates at page 5 of the specification that the
second insulating layer is formed from a silicon oxide
material deposited using a Plasma Enhanced Chemical Vapor
Deposition (PECVD) process using silane as the silicon source
material.
Claims 15 is illustrative of the invention and reads as
follows:
15. A polysilicon resistor structure for use within
integrated circuits comprising:
a first insulating layer formed directly upon a
semiconductor substrate, the first insulating layer being
formed from a glasseous material;
a polysilicon resistor in contact with the first
insulating layer;
a second insulating layer formed upon the first
insulating layer and above the polysilicon resistor, the
second insulating layer being formed from a silicon oxide
material deposited through a Plasma Enhanced Chemical Vapor
Deposition process employing silane as the silicon source
material.
2
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