Appeal No. 1998-2044
Application No. 08/719,773
Such a structure is disclosed to exhibit better performance
characteristics than conventional FETs.
Representative claim 10 is reproduced as follows:
10. A semi-conductor device comprising:
a semiconductor substrate of a first conductivity type;
a source region and a drain of a second conductivity type
formed in the substrate and separated by a channel length;
a buried channel region of the second conductivity type
formed between the source region and the drain region; and
a surface channel region of the first conductivity type
formed between the source region and the drain region, said
surface channel region having a surface channel length less
than the channel length between said source and drain regions.
The examiner relies on the following references:
Kagami 61-256769 Nov. 14,
1986
(Japanese Kokai Koho)
Yazawa et al. (Yazawa) 62-241378 Oct. 22,
1987
(Japanese Kokai)
Claim 16 stands rejected under 35 U.S.C. § 112, second
paragraph, for failing to particularly point out and
distinctly claim the invention. Claims 10-23 stand rejected 1
1Although the final rejection and the examiner’s answer
list only claims 16-23 as being rejected under 35 U.S.C. §
103, this appears to be a typographical error. We will
consider all the pending claims as subject to this rejection
2
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