Appeal No. 1998-0411 Page 2
Application No. 08/050,078
grown on at least one surface thereof, which process
comprises:
arranging a plurality of spaced apart crystalline
substrates facing each other at intervals with said surface
disposed in a substantially vertical direction;
successively disposing melts for each of said multiple
layers into the intervals between the adjacent crystalline
substrates and;
performing a liquid-phase epitaxial growth of each of
said layers successively on the surface of each substrate,
the improvement comprising the steps of:
vertically aligning and spacing said crystalline
substrates in a concave portion of a central upper member of a
substantially cylindrical crystalline substrate holder having
a central axis and having a shaft adapted for rotation
extending downwardly therefrom;
providing fresh melt receptacles and used melt
receptacles respectively, for each of said layers, above and
below, respectively, said cylindrical crystalline substrate
holder, wherein each of said fresh melt and used melt
receptacles are stationarily connected to an outside member in
rotational relationship to said substrate holder, wherein a
multiplicity of
fresh melt and used melt reservoirs, respectively, are
arranged in said receptacles, respectively, radially about
said central axis;
rotating said cylindrical crystalline substrate holder,
relative to said outside member and to said receptacles,
through a series of angular intervals sufficient to
successively align a pair of fresh melt and used melt
reservoirs, respectively, with a vertically disposed substrate
surface;
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