Appeal No. 1998-2884
Application No. 08/495,960
fabrication process.
Representative claim 22 is reproduced as follows:
22. A method of making a semiconductor device
having a trench isolation structure formed in a
stack trench capacitor fabrication process,
comprising the steps of:
forming an interface layer onto a semiconductor
substrate;
forming a buffer layer onto the interface layer;
forming a trench region through the interface
layer, the buffer layer, and into the semiconductor
substrate;
forming a trench wall layer on interior walls of
the trench region, the trench wall layer being in
contact with a remaining interface layer on the
semiconductor substrate;
forming a conductive trench filler layer onto
the trench wall layer within the trench region;
forming a dielectric layer onto the trench
filler layer within the trench region;
forming a conductive layer onto the dielectric
layer within the trench region;
forming a trench cap layer on the conductive
layer such that the trench filler layer, the
dielectric layer, and the conductive layer are
surrounded by the trench wall layer and the trench
cap layer; and
forming a well structure on either side of the
2
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