Appeal No. 1999-0874
Application 08/726,733
1. A semiconductor device having a conductive contact layer structure,
comprising:
first conductive layers formed on a main surface of a semiconductor substrate
with an insulating film therebetween;
a conductive region formed under and between said first conductive layers in the
main surface of said semiconductor substrate;
a first insulation layer formed on said first conductive layers, having a first hole
reaching a surface of said conductive region;
a second insulation layer formed on said first insulation layer with a high etching
selectivity with respect to said first insulation layer, having a second hole in
communication with said first hole;
a sidewall insulation film formed at an inner sidewall of said second insulation
layer defining said second hole; and
a second conductive layer formed inside said first and second holes so as to be
electrically connected to said conductive region and to be electrically insulated from
said first conductive layer.
The following references are relied on by the examiner:
Teng et al. (Teng) 4,656,732 Apr. 14, 1987
Appellants’ admitted prior art Figures 38 and 39
The following references are relied upon by the Board in its formulation of a
new rejection in accordance with 37 CFR § 1.196(b):
2
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