Appeal No. 1999-1466
Application No. 08/371,486
BACKGROUND
The invention is directed to a thin film transistor. Claim 101 is reproduced below.
101. A thin film transistor comprising:
a substrate having an insulating surface;
a channel region formed on said insulating surface comprising an intrinsic
non-single crystal semiconductor material;
a pair of source and drain regions with said channel region therebetween,
said source and drain regions comprising a non-single crystal semiconductor
material having an impurity conductivity type;
a gate insulating film comprising a nitride formed on said channel region so
that the portion of the channel region in direct contact with the gate insulating film is
said intrinsic non-single crystal semiconductor material;
a gate electrode formed on said gate insulating layer;
wherein said source, drain and channel regions are doped with a
recombination center neutralizer selected from the group consisting of H, a halogen
and a combination thereof, and said gate insulating film extends beyond said
channel region to cover junctions between said channel region and said source and
drain regions.
The examiner relies on the following references:
Weitzel et al. (Weitzel) 4,160,260 Jul. 3, 1979
Ovshinsky et al. (Ovshinsky) 4,485,389 Nov. 27, 1984
A. Madan et al. (Madan), Investigation Of The Density Of Localized States In a-Si Using
The Field Effect Technique, Journal of Non-Crystalline Solids 20, pp. 239-257 (1976).
LeComber et al. (LeComber), Amorphous-Silicon Field-Effect Device and Possible
Application, Electronics Letters Vol. 15 No. 6, pp. 179-181 (Mar. 15, 1979).
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