Appeal No. 1999-2006
Application No. 08/561,960
a second conductivity type, opposite that of the first
conductivity type, and adjoining the major surface. A floating
gate extends over the channel region and portions of the source
and drain regions, separated therefrom by a gate oxide. A
control gate is adjacent the floating gate and insulated
therefrom. The floating gate is separated from the major
surface of the semiconductor body by a substantially constant
distance over substantially the entire length of the floating
gate. The floating gate and the major surface each have
corners, which corners are adjacent the ends of the source
region and the drain region along side the channel region.
Additionally, the corners of the floating gate and the major
surface have substantially conforming contours.
A further understanding of the invention can be obtained by
the following claim.
1. A nonvolatile memory cell of the type having a single
lateral transistor in a semiconductor body having a major
surface comprising semiconductor source and drain regions of a
first conductivity type adjoining said major surface and
separated by a channel region of a second conductivity type
opposite that of
the first conductivity type and adjoining said major surface, a
floating gate over at least said channel region and portions of
said source and drain regions and separated therefrom by a gate
oxide on said major surface, and a control gate over said
floating gate and insulated therefrom, wherein said floating
2
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