Ex Parte WARREN et al - Page 3



          Appeal No. 2000-1042                                                        
          Application No. 08/986,449                                                  
          Chan et al. (Chan ‘429)            5,580,429      Dec.  3, 1996             
          Fetherston et al. (Fetherston)     5,693,376      Dec.  2, 1997             
               Claims 1-15 stand rejected under 35 U.S.C. § 103 as being              
          obvious over Cabrera alone or considered with Fetherston, Conrad,           
          Chan ‘920, Chan ‘429, and Leung.                                            
               In addition, the examiner has rejected claims 4-6 under 35             
          U.S.C. § 103 as being obvious over Cabrera in view of Heyse and             
          Gandman or alternatively over Cabrera in view of Heyse and                  
          Gandman and further in view of Fetherston, Conrad, Chan ‘920,               
          Chan ‘429, and Leung.                                                       
                                       OPINION                                        
               None of the above noted rejections can be sustained.                   
               As his primary prior art teaching, the examiner relies upon            
          the disclosure in column 1 of Cabrera regarding prior art methods           
          of reducing coke formation on metal surfaces exposed to                     
          hydrocarbon at high temperatures which methods include the ion              
          implantation of silicon (see lines 11-49 in column 1).  On pages            
          5 and 6 of the answer, the examiner presents the following                  
          exposition in support of his conclusion that it would have been             
          obvious to modify this prior art ion implantation method in order           
          to result in the appellants’ claimed method:                                
                    It is acknowledged that the reference does not                    
               teach the process steps employed in ion implantation,                  
               i.e. the providing implanting apparatus, operating said                
                                          3                                           




Page:  Previous  1  2  3  4  5  6  7  8  Next 

Last modified: November 3, 2007