Appeal No. 2000-1389
Application No. 08/949,826
(c) forming in said tank and at the surface of said
substrate a second doped region of second conductivity type
having a second doping concentration greater than said first
doping concentration;
(d) forming a layer of insulation over the surface of said
substrate having a first thickness to provide a tunnel region
over at least a portion of said second doped region and a greater
thickness over any remaining portion of said second doped region
and elsewhere; and
(e) forming said floating gate of a material capable of
holding an electrical charge above said second doped region and
at least a portion of said first doped region on said layer of
insulation, said floating gate extending laterally beyond lateral
boundaries of the second doped region in every direction, at
least a portion of said floating gate extending over said larger
thickness of said layer of insulation.
The prior art reference of record relied upon by the
examiner in rejecting the appealed claims is:
Santin et al. (Santin) 5,411,908 May 02, 1995
The amendment filed April 15, 1996 stands objected to under
35 U.S.C. § 132 as introducing new matter. Similarly, the
proposed drawing correction filed April 15, 1996 stands
disapproved for introducing new matter.
Claims 8 through 13 and 24 stand rejected under 35 U.S.C.
§ 112, first paragraph, as containing subject matter which was
not described in the specification in such a way as to reasonably
convey to one skilled in the relevant art that the inventor, at
the time the application was filed, had possession of the claimed
invention.
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