Appeal No. 2000-1590
Application 09/130,226
Representative claim 1 is reproduced as follows:
1. A method of manufacturing a semiconductor trench
device comprising:
forming a dielectric on a substrate, said dielectric
having an underlying oxide layer adjacent said substrate;
etching a trench in said dielectric and said substrate;
forming a recess in said underlying oxide layer;
filling said recess with a nitride plug;
filling said trench with a conductive material; and
oxidizing said dielectric and said conductive material,
wherein said nitride plug controls a shape of a trench corner of
said trench.
The examiner relies on the following references:
Fulton et al. (Fulton) 4,666,556 May 19, 1987
Koike et al. (Koike) 5,578,518 Nov. 26, 1996
Gardner et al. (Gardner) 5,891,787 Apr. 06, 1999
(filed Sep. 04, 1997)
Claims 1-10 stand rejected under 35 U.S.C. § 103. As
evidence of obviousness the examiner offers Koike in view of
Fulton and Gardner.
Rather than repeat the arguments of appellants or the
examiner, we make reference to the brief and the answer for the
respective details thereof.
2
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