Appeal No. 2000-1801
Application No. 08/667,660
11. An apparatus for molecular beam epitaxy layer growth by using
a process model of non-thickness data having model data relating to
layer growth, comprising:
a MBE growth chamber for directing a first beam of a first
growth species at a wafer in a growth chamber to grow a first layer
of said first growth species;
a mass spectrometer for measuring the flux of the reflection
of said first beam from said wafer to obtain a first thickness
measurement of said first layer;
a controller for comparing said first thickness measurement
with said process model of non-thickness data based on said model
data relating to said layer growth and to obtain second target
thickness of a second layer to be grown;
said MBE growth chamber directing a beam of a second growth
species at said wafer in said growth chamber; and
said MBE growth chamber terminating said second beam of said
second growth species when said second target thickness has been
reached in response to said controller.
All of the appealed claims stand rejected for obviousness
under 35 USC § 103 based upon the following single prior art
reference:1
Celii et al. (Celii) 5,399,521 March 21, 1995
(filing date: Oct. 8, 1993)
Based upon the record before us, we agree with the appellants
that the examiner has failed to establish a prima facie case to
support the rejection which has been applied against the appealed
1 We note that in a related case (Appeal No. 98-1956), a
distinct ground of rejection was applied against a group of
method claims.
2
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