Appeal No. 2000-1927
Application No. 08/990,754
BACKGROUND
The invention is directed to a semiconductor device which is reduced in
resistance. Claim 1 is reproduced below.
1. A semiconductor device comprising:
a first conductivity type semiconductor substrate;
an isolation insulator film formed on an isolation region of a major surface
of said semiconductor substrate;
a second conductivity type source and a second conductivity type drain
formed at an active region being enclosed with said isolation region on said
major surface of said semiconductor substrate;
a gate electrode formed on a major surface of said active region through a
gate insulator film;
metal compound layers formed on surfaces of said source and said drain
and that of said gate electrode respectively; and
second conductivity type first impurity layers formed on boundary portions
between said source and said drain and said isolation region to be deeper than
said source and said drain, wherein the first impurity layers have an impurity
concentration lower than that of the source and the drain.
The examiner relies on the following references:
Hori et al. (Hori) 5,320,974 Jun. 14, 1994
Murakami et al. (Murakami) 5,623,154 Apr. 22, 1997
(filed Jun. 7, 1995)
Claims 1-6 and 16 stand rejected under 35 U.S.C. § 103 as being unpatentable
over Murakami and Hori.
Claims 7 through 15 have been withdrawn from consideration.
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