Appeal No. 2000-2060
Application 08/568,209
resistor and wherein preselected portions of the uninterrupted
layer of conductive material are doped at different levels such
that a first portion of the layer functions as a channel of the
transistor” as recited in independent claim 13, or the step of
“inter-connecting the transistor with an uninterrupted layer of
conductive material so that a first portion of the layer
functions as a channel of the transistor” as recited in
independent claim 18. See Examiner’s Answer, Page 4, lines 15-
20. To provide a motivation for the above deficiencies, the
Examiner relies on Tango and Hawkins.
The Examiner states that Tango teaches a MOS integrated
circuit having a poly-silicon layer with both a channel region of
the transistor and a resistor formed by doping the silicon layer
differently in order to reduce the size. See Examiner’s Answer,
page 5, lines 1-5. The Examiner also cites Hawkins to teach
using a poly-silicon resistor in an ink-jet printhead. See
Examiner’s Answer, Page 5, lines 8-9 and 11-12. The Examiner
then concludes that it would have been obvious to one skilled in
the art to provide a poly-silicon resistor in the Hess device in
order to eject ink, as taught by Hawkins, and to form the
5
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