Ex parte HSIAO - Page 3




          Appeal No. 2001-0228                                                        
          Application No. 09/116,612                                                  


          employs an organic polymer anti-reflective coating under the                
          photoresist layer and "a single plasma etch method employing                
          an etchant gas composition which upon plasma activation forms               
          a chlorine containing etchant species" (claim 1).                           
               Appealed claims 1-15 stand rejected under 35 U.S.C. § 103              
          as being unpatentable over Huang in view of Kolar.                          
               Upon careful consideration of the opposing arguments                   
          presented on appeal, we concur with appellant that the                      
          examiner has not established a prima facie case of obviousness              
          for the claimed method.  Accordingly, we will reverse the                   
          examiner's rejection.                                                       
               The examiner recognizes that Huang, the primary                        
          reference, "differs from the instant claimed invention by                   
          using three sequential etching steps instead of [a] single                  
          sequential etching step" (page 5 of Answer, sixth paragraph).               
          However, the examiner relies upon Kolar for "performing a                   
          single sequential etching step to etch all layers of the stack              
          layers using chlorine based reactive etch gases (Col 3, lines               
          17-45)" (page 5 of Answer, penultimate paragraph).  The                     
          examiner explains that:                                                     
               Although, Kolar does not clearly recite                                
               sequentially etching of the tri-layer using a single                   
                                         -3-                                          




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