Appeal No. 1999-0887
Application No. 08/702,074
termination structure for a silicon-based semiconductor
component. The semiconductor component has a semiconductor
region which forms a depletion region in the active area of
the semiconductor component. The junction termination, which
surrounds the active area on or in a surface of the
semiconductor region, is formed with silicon with a doping
opposite to that of the semiconductor region, the dopant
having an impurity level of at least 0.1 eV in silicon.
Claim 1 is illustrative of the invention and reads as
follows:
1. A semiconductor component comprising:
at least one silicon semiconductor region with
n-type conduction, the semiconductor region forming a
depletion region in an active area of the semiconductor
region when an off-state voltage is applied to the active
area; and
a junction termination for the active area, the
junction termination being disposed around the active
area at or in a surface of the semiconductor region, the
junction termination comprising silicon with p-type
conduction, the silicon with p-type conduction of the
junction termination being doped with at least one dopant
having an acceptor level of at least approximately 0.1 eV
in silicon.
The Examiner relies on the following prior art:
Jenny 2,809,165 Oct. 08,
1957
2
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