Appeal No. 1999-2512
Application No. 08/888,499
APPENDIX
29. A plasma enhanced chemical vapor deposition process
for depositing a silicon oxide film containing a halogen from a
mixture of plasma precursor gases including tetraethoxysilane and
a halogen-containing gas onto a substrate mounted in a vacuum
deposition chamber which comprises forming a plasma in said chamber
from said precursor gases by means of a plurality of power sources
connected to said chamber operated simultaneously, each power
source having a different frequency.
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