Appeal No. 1999-2739
Application No. 08/891,127
APPENDIX
1. A method for a Nickel silicide formation in an
integrated circuit by Electroless Ni deposition on Polysilicon
and rapid thermal annealing comprising the following steps:
a) forming and patterning a polysilicon layer over a
substrate;
b) selectively electroless depositing Nickel over said
polysilicon layer forming a Nickel layer over said polysilicon
layer;
c) rapidly thermally annealing said substrate forming a
nickel silicide layer over said polysilicon layer; said nickel
silicide layer forming part of a semiconductor integrated
circuit device;
said rapid thermal anneal is performed at a temperature in a
range of between about 400 and 750°C for a time in a range of
between about 30 and 60 sec and with a nitrogen flow whereby
said nickel silicide layer does not have agglomeration.
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