Appeal No. 1999-2834
Application No. 08/483,731
99. A semiconductor processing lithography apparatus
for maskless pattern generation comprising:
an array of radiation source cells arranged in rows and
columns, the array being formed on a flexible insulating
membrane held in a support frame;
control logic mounted on the membrane for controlling
the cells, wherein each cell comprises:
a source of radiation;
a target on which the radiation is incident for
generating X-rays; and
an aperture for emitting the x-rays from the target
onto a surface to be exposed.
No references were relied on by the examiner.
Claims 99 through 104 stand rejected under the first
paragraph of 35 U.S.C. § 112 because of a nonenabling disclosure.
An excerpt from the grounds of the rejection is as follows
(answer, pages 3 and 4):
The emission of electrons from a cold cathode and
their acceleration toward a target with sufficient
energy to cause the generation of x rays requires the
application of substantial potential difference between
the cathode and the target. The manner of applying
such potential and appropriately insulating the various
components on the very thin membrane have not been
taught.
The manner of creating and maintaining a vacuum
within the very thin membrane to encompass the charged
particle and x-ray generators has not been taught.
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