Appeal No. 2001-0777
Application No. 09/652,893 Page 4
F.2d 1468, 1471-1472, 223 USPQ 785, 787-788 (Fed. Cir. 1984).
Accordingly, we will not sustain the examiner's rejections.
Here, all of the appealed method claims require the process
steps of chemically vapor depositing a material on a substrate
and, under annealing conditions, exposing the whole CVD coated
substrate simultaneously to a wide, large beam of electron beam
radiation to form a film from the CVD material.
As acknowledged by the examiner, the Japanese patent
abstract of 58-151517 and Yoshii taken collectively do not
disclose either the chemical vapor deposition step or the
particular electron beam radiation application step as claimed by
appellants. Rather, those references disclose depositing a
silicon dioxide material without specifying a CVD method followed
by annealing with a scanning electron beam. According to Yoshii
(page 4 of the translation), the electron beam is scanned with a
10 micron step width. Yoshii (page 3 of the translation) was
concerned with solving problems with poor element characteristics
and non-uniformity obtained when applying a scanning electron
beam. Yoshii (first full paragraph at page 4 of the translation)
solved that problem by employing islands covered with thick
insulating film that results in less energy being applied to the
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