Ex Parte SCHEMMEL et al - Page 2



                    Appeal No. 2001-0953                                                                                                                                  
                    Application No. 08/923,651                                                                                                                            

                    invention is an apparatus and method for automatically detecting                                                                                      
                    defects on silicon dyes on a silicon wafer.  The apparatus                                                                                            
                    automatically detects defects by having an image acquisition                                                                                          
                    system and a computer connected to the image acquisition system.                                                                                      
                    The computer analyzes a random sample of silicon dies to                                                                                              
                    determine an average or standardized die image.  The statistical                                                                                      
                    die model is compared to silicon dies on a silicon wafer to                                                                                           
                    determine if the silicon dies have surface defects.  See page 5                                                                                       
                    of Appellants' specification.                                                                                                                         
                             Independent claim 1 present in the application is reproduced                                                                                 
                    as follows:                                                                                                                                           
                    1.       An apparatus for automatically detecting defects on silicon                                                                                  
                    dies on a silicon wafer comprising:                                                                                                                   
                             an image acquisition system; and                                                                                                             
                             a computer connected to said image acquisition system                                                                                        
                    wherein said computer automatically aligns said silicon wafer,                                                                                        
                    automatically obtains an image of a plurality of silicon dies,                                                                                        
                    automatically calculates a statistical die model from a samples                                                                                       
                    [sic; sample] of silicon dies, and automatically compares said                                                                                        
                    statistical die model to a plurality of silicon die images to                                                                                         
                    determine if said silicon dies have surface defects; and if said                                                                                      
                    silicon dies have surface defects stores the location of said                                                                                         
                    silicon dies containing defects and the location of said surface                                                                                      
                    defects on the silicon wafer in memory.                                                                                                               




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