Appeal No. 2001-1545
Application No. 09/199,666
Appellants’ invention relates to a semiconductor structure having elevated
silicide source/drain regions and metal gate electrode on nitride/oxide dielectric. An
understanding of the invention can be derived from a reading of exemplary claim 34,
which is reproduced below.
34. A semiconductor structure having a gate structure formed on a
substrate, the gate structure comprising:
a first gate dielectric formed on the substrate;
a second gate dielectric formed on the first gate dielectric, separate
from the first gate dielectric, and having a width about equal to the first
gate dielectric;
a metal gate electrode formed on the second gate dielectric layer
and having a width about equal to the first and second gate dielectrics;
and
nitride spacers formed on the substrate and adjacent each of the
first and second gate dielectrics and the metal gate electrode.
The prior art of record relied upon by the examiner in rejecting the appealed
claims is as follows:
Chau et al. (Chau) 5,908,313 Jan. 01, 1999
(filed Dec. 31, 1996)
Shiozawa et al. (Shiozawa) 5,970,352 Oct. 19, 1999
(filed Apr. 23, 1998)
Thomas et al. (Thomas) 6,004,878 Dec. 21, 1999
(filed Feb. 12, 1998)
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